? semiconductor components industries, llc, 2010 july, 2010 ? rev. 5 1 publication order number: mmbt6520lt1/d MMBT6520LT1G high voltage transistor pnp silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 350 vdc collector ? base voltage v cbo ? 350 vdc emitter ? base voltage v ebo ? 5.0 vdc base current i b ? 250 ma collector current ? continuous i c ? 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://onsemi.com sot ? 23 (to ? 236) case 318 style 6 device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. MMBT6520LT1G sot ? 23 (pb ? free) 3,000 / tape & reel 1 2 3 mmbt6520lt3g sot ? 23 (pb ? free) 10,000/tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. 1 2z m 2z = device code m = date code* = pb ? free package (note: microdot may be in either location) marking diagram collector 3 1 base 2 emitter
MMBT6520LT1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = ? 1.0 ma) v (br)ceo ? 350 ? vdc collector ? base breakdown voltage (i c = ? 100 a) v (br)cbo ? 350 ? vdc emitter ? base breakdown voltage (i e = ? 10 a) v (br)ebo ? 5.0 ? vdc collector cutoff current (v cb = ? 250 v) i cbo ? ? 50 na emitter cutoff current (v eb = ? 4.0 v) i ebo ? ? 50 na on characteristics dc current gain (i c = ? 1.0 ma, v ce = ? 10 v) (i c = ? 10 ma, v ce = ? 10 v) (i c = ? 30 ma, v ce = ? 10 v) (i c = ? 50 ma, v ce = ? 10 v) (i c = ? 100 ma, v ce = ? 10 v) h fe 20 30 30 20 15 ? ? 200 200 ? ? collector ? emitter saturation voltage (i c = ? 10 ma, i b = ? 1.0 ma) (i c = ? 20 ma, i b = ? 2.0 ma) (i c = ? 30 ma, i b = ? 3.0 ma) (i c = ? 50 ma, i b = ? 5.0 ma) v ce(sat) ? ? ? ? ? 0.30 ? 0.35 ? 0.50 ? 1.0 vdc base ? emitter saturation voltage (i c = ? 10 ma, i b = ? 1.0 ma) (i c = ? 20 ma, i b = ? 2.0 ma) (i c = ? 30 ma, i b = ? 3.0 ma) v be(sat) ? ? ? ? 0.75 ? 0.85 ? 0.90 vdc base ? emitter on voltage (i c = ? 100 ma, v ce = ? 10 v) v be(on) ? ? 2.0 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 ma, v ce = ? 20 v, f = 20 mhz) f t 40 200 mhz collector ? base capacitance (v cb = ? 20 v, f = 1.0 mhz) c cb ? 6.0 pf emitter ? base capacitance (v eb = ? 0.5 v, f = 1.0 mhz) c eb ? 100 pf
MMBT6520LT1G http://onsemi.com 3 figure 1. dc current gain i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 h fe , dc current gain 200 100 20 30 50 70 v ce = 10 v t j = 125 c 25 c -55 c figure 2. current ? gain ? bandwidth product figure 3. ?on? voltages i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 30 50 70 f, current-gain bandwidth product (mhz) t 10 t j = 25 c v ce = 20 v f = 20 mhz i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 v, voltage (volts) 1.4 1.2 0 0.6 0.8 1.0 0.4 0.2 t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2.5 r v , temperature coefficients (mv/ c) 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 r vc for v ce(sat) r vb for v be 25 c to 125 c -55 c to 25 c -55 c to 125 c i c i b 10 figure 4. temperature coefficients v r , reverse voltage (volts) 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 100 2.0 3.0 5.0 70 1.0 c, capacitance (pf) 7.0 10 20 30 50 t j = 25 c c cb c eb figure 5. capacitance i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 t, time (ns) 1.0k 20 10 30 50 70 100 200 300 500 700 t d @ v be(off) = 2.0 v t r v ce(off) = 100 v i c /i b = 5.0 t j = 25 c figure 6. turn ? on time
MMBT6520LT1G http://onsemi.com 4 figure 7. turn ? off time i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 t, time (ns) 10k 100 200 300 500 700 1.0k 2.0k 3.0k 5.0k 7.0k v ce(off) = 100 v i c /i b = 5.0 i b1 = i b2 t j = 25 c t s t f figure 8. safe operating area v ce , collector ? emitter voltage (v) 1000 10 1 0.001 0.01 0.1 i c , collector current (a) 10 ms 1 100 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 r(t), transient thermal resistance (normalized) 10k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k t, time (ms) figure 9. thermal response d = 0.5 0.2 0.1 0.05 single pulse single pulse z jc(t) = r(t) ? r jc z ja(t) = r(t) ? r ja r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 figure 10. switching time test circuit +10.8 v -9.2 v +v cc 2.2 k 20 k 50 50 sampling scope 1/2msd7000 1.0 k v cc adjusted for v ce(off) = 100 v approximately -1.35 v (adjust for v (be)off = 2.0 v) pulse width 100 s t r , t f 5.0 ns duty cycle 1.0% for pnp test circuit, reverse all voltage polarities 1.0 s
MMBT6520LT1G http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt6520lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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